Special Issue Editors
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School of Physics and Electronics, Central South University; Changsha 410083, China
Interests: synthesis of low-dimensional materials, nanodevice fabrication, photodetectors and radiation detectors.
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Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
Interests: hybrid optoelectronic materials and devices and perovskite solar cells.
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School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
Interests: physical properties of magnetic materials and informational devices; spintronic devices; new concept functional electronic devices.
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College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
Interests: Synthesis of nanomaterials and their opto-electronic properties; Nanomaterials for optoelectronic devices, such as light-emitting diodes, photodetectors, solar cells, and memories; Flexible and stretchable devices for wearable fields; Quantum dot light-emitting diodes; Light-emitting mechanism and carrier dynamics of semiconductor nanomaterials; Metal halide perovskite-based optoelectronic devices.
Special Issue Information
Aim and Scope: Differing from traditional three-dimensional materials, two-dimensional (2D) materials represented by graphene have attracted wide attentions in the academic and industrial communities, which have ultra-high-ratio surface area, quantum limit effect, symmetry breaking and other factors that created its novel physical and chemical properties. 2D materials have become the focus of condensed matter physics, materials science and chemistry research. In this special issues, we are going to collect the recent progress of synthesis, characterization and functional devices application on novel 2D materials.
Subtopics: Controlled synthesis and chemical modification of 2D materials; Advanced characterization and in-situ measurement of 2D materials; Structure-physical properties relationship study; Development of devices fabrication on 2D materials; Various devices application in the electronics, optoelectronics, energy fields and other functional devices.
Keywords: ultrathin 2D materials; novel synthesis; advanced characterization; structure-physical properties relationship; electronic and optoelectronic devices; other functional devices;
Deadline for manuscript submissions: 31 November 2020
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(1) Monolayer MoTe2 as saturable absorber for ultrafast fiber laser
X. X. Han
School of science, Xi’an Polytechnic University, Xi’an Shaanxi, 710048, China
*Corresponding author: firstname.lastname@example.org
Abstract: Two dimensional materials have attracted great interest from basic research to practical applications due to their highly anisotropic layered structure. Here, we demonstrate the use of monolayer MoTe2 film as saturable absorber (SA) in a mode-locked fiber laser for the generation of ultrashort soliton pulses at the telecommunication band. The SA is synthesized by coating monolayer MoTe2 film on the pinhole of fiber pigtail and it can work stably at mode-locking state under all-range pump power, indicating that monolayer thin MoTe2 film is a suitable versatile SA material for ultrafast optics. Our new SA will benefit high-power pulsed laser, materials processing, and frequency comb spectroscopy.
(2) Interfacial properties of atomically thin 1H MoTe2-Pt contacts: implications for field-effect transistors
Shuchang Cai, Jianhui Chen, Baisheng Sa*, Jingying Zheng**, Cuilian Wen, and Bo Wu
Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
Abstract: Atomically thin two-dimensional (2D) transition metal dichalcogenide MoTe2 have attached global interest for the application prospects in the field of electronics and optoelectronic. 2D metallic PdTe2 has been proposed to be a competitive contact material for MoTe2 based metal oxide semiconductor field-effect transistors (MOSFETs), where PdTe2 can be achieved from the tellurization of Pd. In this work, we systematically studied the electrical contact properties of monolayer (ML) and bilayer (BL) 1H MoTe2 with Pd and PdTe2 based on density functional theory and ab initio quantum transport simulations. Interestingly, all contact systems form n-type Schottky contacts with MoTe2 in the lateral direction, and the electron Schottky barrier heights are 0.44, 0.47, 0.34 and 0.47 eV for ML MoTe2/ML PdTe2, BL MoTe2/ML PdTe2, ML MoTe2/Pd and BL MoTe2/Pd contacts, respectively. Our results highlighted that the MoTe2 MOSFETs using PdTe2 as electrodes requires smaller changing gate voltage than Pd. On the other hand, BL MoTe2 has been found to show better device performance than ML MoTe2 in MOSFETs. Therefore, this paper provides deeper understanding and guidance for the design of MoTe2 field effect transistor.
Keywords: Semiconductor-metal contacts, Field-effect transistors, MoTe2, solar cell, Schottky barrier, ab initio quantum transport simulation.
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(3) A physics based analytical model for quantum current and capacitance of a single electron transistor with island made of monolayer molybdenum ditelluride nanoribbon
M. K. Bera*, V. D. Sharma and N. Sharma
Department of Physics, Maharishi Markandeshwar (Deemed to be University), Mullana Ambala (133207), Haryana, India.
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Abstract: Single electron transistors (SET) driven by quantum mechanically controlled coulomb blockade and single electron tunneling are promising contestants for future nanoelectronic devices. A physics based analytical model is developed to study the current and quantum capacitance of SET. A new island based SET device
architecture is proposed which is made of monolayer molybdenum ditelluride nanoribbon (MoTe2 NR). It has been observed through this simulation study that SET current does not struggle much in the coulomb blockade region, whereas outside this region current value decreases for longer nanoribbon presumably due to lengthier potential well in the island region which is responsible for lowering the tunneling rate. On the other hand, because of atomically thin nanoribbon typically within ~0.4 to 2 nm, quantum capacitance comes into play which eventually may degrade the electrical performances further. Therefore, the influences of quantum capacitance have also been investigated. A three-band nearest-neighbor tight binding model is incorporated to assimilate detail structural information of energy band formation into the quantum capacitance estimation.